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| P1/7 HIGH-VOLTAGE MONOLITHIC IC ECN3035F/3036F ECN3035F/3036F is a driver IC for a three-phase bridge inverter which has MOSFETs or IGBTs for the outputs. Especially, it is very suitable for controlling the speed of three-phase DC brushless motors to which converted AC200~230V power supplies are applied. The internal block diagram is shown in Fig. 1. Functions * * * * * * Integrated charge pump circuit Integrated 3-phase distributor circuit Integrated PWM circuit Integrated over current protection circuit Integrated rotating direction sense circuit Integrated FG circuit Package FP-28DJ(JEDEC) Features * Speed control for a 3-phase DC brushless motor is available with an external microprocessor. * Bottom arm circuits can be operated in 20kHz chopping frequency of PWM. VCC (15V) C0 CB VCC CB VB (7.5V) HU HV HW D1 RW RV RU Hall ICs D2 C2 +C+ VS Vs + C1 CL VB Supply Charge Pump CLOCK PGU PGV PGW RM FG MCR MonoMulti EdgeTrigger FG Top arm Driver MU CM RWD VSP + 3-phase Distributer CMP - MV MW Bottom arm Driver OC detection CLOCK + NGU NGV NGW Motor SAW Wave Generator CMP - Vref Note.1 Filter CR RTR CTR VTR GND Note.1 ECN3035F:Vref=1.25V ECN3036F:Vref=0.50V RS Rs Fig.1 Block diagram PDE-3035F/36F-1 P2/7 ECN3035F/3036F 1. General (1) Type (2) Application (3) Structure (4) Package ECN3035F, ECN3036F 3-Phase DC Brushless Motor Monolithic IC FP-28DJ(JEDEC) 2. Maximum Allowable Ratings (Ta=25C) No. Items Symbols 1 Output Device VSM Breakdown Voltage 2 Supply Voltage VCC 3 Input Voltage VIN 4 Operating Junction Temperature Storage Temperature Tjop Terminal VS MU,MV,MW VCC VSP,RS,RWD HU,HV,HW Ratings 500 18 -0.5 -20 Unit V V V C Condition ~ VB+0.5 ~ +125 Note 1 5 Tstg C -40 ~ +150 Note1. Thermal resistance (Rj-a) is approximately 100C /W. (When ICs are installed on a print board.) The value of this resistance is determined by the result of the trial product. 3. Recommended Operating Conditions No. Items Symbols Terminal 1 Supply Voltage VS VS 2 VCC VCC MIN 50 13.5 TYP 15 MAX 380 16.5 Unit V V Condition Within allowable rating at Tjop PDE-3035F/36F-1 P3/7 ECN3035F/3036F 4. Electrical Characteristics (Ta=25C) Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm B; Bottom arm Suffix *;U,V,W Phase No. Items Symbols Terminal 1 Standby Current IS VS 2 ICC VCC 3 Output Source Current IO+T PG* 4 IO+B NG* 5 Output Sink Current IO-T PG* 6 IO-B NG* 7 High Level Output VOHT C+,PG* Voltage 8 VOHB VCC,NG* 9 10 11 Output Resistance at VTR terminal 12 Amplitude Level of 13 SAW wave 14 Amplitude of SAW wave 15 Reference Voltage for Over Current detection 16 Input Voltage 17 18 Input Current 19 Low Level Output Voltage VOLT VOLB RVTR PG*,M* NG*,GND VTR MIN 30 100 100 100 4.9 1.7 2.8 1.10 0.45 3.5 -100 TYP 1.0 3.0 50 200 200 200 200 5.4 2.1 3.3 1.25 0.50 MAX 2.5 6.0 100 300 300 300 0.2 0.2 0.2 0.2 400 6.1 2.5 3.8 1.35 0.55 1.5 50 Unit mA mA mA mA mA mA V V V V W V V V V V V V uA uA Condition VSP IO=0A IVTR=1mA Note 2 Note.5 only for ECN3035F only for ECN3036F VSAWH CR VSAWL CR VSAWW CR Vref VIH VIL IIH IIL RS HU,HV,HW RWD VSP HU,HV,HW RWD CB CB FG VSP=5.0V Note 1 Pull Down Resistance 20 VB Output Voltage VB 6.8 7.5 8.2 V 21 VB Output Current IB 25 mA 22 Output Resistance at RFG 250 400 W FG terminal 23 Reference Voltage for Vref2 MCR V VB2/3 VB2/3 VB2/3 FG pulse 0.95 1.05 24 Charge Pump Voltage VCP C+,VS 13.3 14.5 V Note1. The pull up resistance and the pull down resistance are typically 200 kW. Note2. Please see Note 2 in item 6 for determining the frequency of SAW wave. Note3. The equivalent circuit at FG terminal is shown in Fig. 2 Note4. Please see Note 3 in item 6 for determining the FG output pulse width. Note5. The amplitude of SAW(VSAWW) is determined by the following equation, VSAWW=VSAWH-VSAWL (V) Fig. 2 Note6. The charge pump voltage (VCP) is determined by the voltage ii between C+ and VS. HU,HV,HW,RWD=0V Note 1 Pull Up Resistance IB=0mA delta VB0.2V Note 3 IFG=1mA Note 4 At stand-by VB Note 6 FG Equivalent around FG PDE-3035F/36F-1 P4/7 ECN3035F/3036F 5. Function 5.1 Truth Table Input RWD H H H H H H L L L L L L HU H H H L L L H H H L L L L HV L L H H H L H L L L H H L HW H L L L H H L L H H H L L U Phase Top L L L H H L L H H L L L L Bottom H H L L L L L L L L H H L V Phase Top H L L L L H H L L L L H L Bottom L L H H L L L L H H L L L W Phase Top L H H L L L L L L H H L L Bottom L L L L H H H H L L L L L H H H L L L L L L Note1. Top arm : Output voltage for between PG* and M*. Bottom arm : Output voltage for between NG* and GND. Note2. It is possible to change the rotation direction of the motor by putting a signal into RWD terminal. A method of using is shown in item 5.7. 5.2 Timing Chart ( RWD = H ) HU Input HV HW Output Voltage PGU-M U NGU-GND PGV-M V NGV-GND PGW-M W NGW -GND FG tM PDE-3035F/36F-1 P5/7 ECN3035F/3036F 5.3 PWM Operation The PWM signal is produced by comparing the input voltage at VSP terminal with the voltage from the internal SAW wave. The duty of the PWM signal can be changed linearly by the triangular wave amplitude level, from the minimum point of VSAWL to the maximum point of VSAWH, and when the level is under VSAWL, the duty becomes 0%, and when the level is over VSAWH, the duty becomes 100%. In addition, chopping with the PWM signal is operated in the bottom arm circuit. Over Current Limiting Operation This IC detects over current by checking the voltage drop at the external resistance RS. When the input voltage at RS terminal exceeds the internal reference voltage(Vref), this IC turns off the output of the bottom arm circuit. After over current detection, reset operation is done at every period of the PWM signal. 5.4 5.5 FG operation One shot pulse is put out at this terminal synchronized with the rising edge of the synthesized signal of the hole signal HU, HV, HW. The pulse width tM is decided by the constant number which is determined by R and C at MCR terminal(See No.6 Standard Application.). One shot pulse is produced in a mono-multi circuit. This circuit has a retrigger feature which keeps the output signal high when a trigger is input during high signal of FG output. FG synthesized wave Triggered pulse Vref2 MCR voltage FG output voltage tM Usual operation tM tM Retriggered operation 5.6 VCC Under Voltage Detection Operation When VCC becomes lower than the determined voltage, all arms operation and the charge pump operation are forced to stop. The detection voltage is typically 11.5V, and it also has a hysterisis of 0.5V. However, there may be a case when the operation is canceled under 2V of VCC. 5.7 Rotating Direction of the Motor The rotating direction of the motor can be changed by inputting "H" or "L" signal to RWD terminal. Please do not change this signal at operation. This may cause short through of the output Device. However, it is OK if the VSP input voltage is below VSAWL(1.7V typ.) before RWD input voltage change so that the short through is avoided. *;U/V/W NG*, PG*-M*, CL (V) recover operation hysterisis 0 VCC (V) Fig 3. Protection operation for VCC under voltage PDE-3035F/36F-1 P6/7 ECN3035F/3036F 6. Standard Application 6.1 External Parts Component Recommended Value C0 More than 0.22 mF C1,C2 Usage for smoothing Internal Power Supply(VB). for charge pump Remark stress voltage is VB stress voltage is VCC 1.0 mF 20% Hitachi DFG1C6(glass mold) for charge pump 600V/1.0A or equivalent parts trr100ns Rs Note 1 for current limiting CTR for PWM Note 2 1800 pF 5% RTR 22 kW 5% RU,RV,RW 5.6kW 5% pull up resistance CM More than 1000pF for Output Pulse width at Note 3 RM FG terminal More than 10kW Note1. The start up current is limited by the following equation. IO = Vref / Rs (A) Note2. The PWM frequency is approximately determined by the following equation. At the recommended Value of CR, the error factor of IC is about 10%. fPWM = -1 / (2CRLn(1-3.5/5.5)) ; Ln is natural logarithm = 0.494 / (CR) (Hz) Note3. The FG output pulse width is determined approximately by the following equation. tM10ms should be necessary. tM = -(CMRMLn(1-VB2/3/VB)) = 1.1CMRM (s) D1,D2 D1 RW RV RU Hall ICs VCC (15V) C0 CB VCC CB VB D2 C2 +C+ VS Vs + C1 CL HU HV HW VB Supply (7.5V) Charge Pump CLOCK PGU PGV PGW RM FG MCR MonoMulti EdgeTrigger FG Top arm Driver MU CM RWD VSP + 3-phase Distributer CMP - MV MW Bottom arm Driver OC detection CLOCK + NGU NGV NGW Motor SAW Wave Generator CMP - Vref Note.1 Filter CR RTR CTR VTR GND Note.1 ECN3035F:Vref=1.25V ECN3036F:Vref=0.50V RS Rs Fig.4 Block diagram with external parts 6.2 Supply Voltage Sequence The order for turning on power supplies should be (1)Vcc, VS (2)VSP. The order for turning off should be (1)VSP (2)VS, Vcc. When the order is mistaken, there may be a case when the external bridge circuit is broken. PDE-3035F/36F-1 P7/7 ECN3035F/3036F 7. Terminal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FG M CR CR VTR HU HV HW VSP RWD RS CB NGU NGV NGW (M ark in g sid e) MU PGU N .C MV PGV N .C MW PGW N .C C+ VS CL VCC GND 28 27 26 25 24 23 22 21 20 19 18 17 16 15 F ig. 5 8. Package Dimensions 18.13MAX P in co n n ectio n 28 15 1 14 10.310.20 7.520.10 0.220.05 1.27 0.10 +0.10 0.41 -0.05 2.59MAX +0.05 -0.10 0.15 0.530.20 0.15 PDE-3035F/36F-1 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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